Technische Dokumente

Quantum Computing

30. November 2017 Schwerpunkt auf Bonden Laden Sie

Qubit compatible superconducting interconnects

Results of the 2015 testbeam of 180 nm AMS High-Voltage CMOS sensor prototype

June 30, 2016 Schwerpunkt auf Bonden DPNC, University of Geneva, Switzerland Laden Sie

Evaluation of Sn-based Microbumping Technology for Hybrid IR Detectors, 10µm Pitch to 5µm Pitch

ECTC 2015 Schwerpunkt auf Bonden IMEC Leuven, Belgium SOFRADIR Veurey-Voroize, France Laden Sie

Interconnect and bonding techniques for pixelated X-ray and gamma-ray detectors

7-12 September, 2014 Schwerpunkt auf Bonden UNIVERSITY OF SURREY, Guilford, Surrey, U.K. 10th International Conference on Position Sensitive Detectors Laden Sie

Die Attach Bonding using High-frequency Ultrasonic Energy for High-temperature application

June 2014 Schwerpunkt auf Bonden IME - Journal of Electronics materials (abstract) Laden Sie

Wafer-level 3D integration with 5 micron interconnect pitch for infrared imaging applications

June 2014 Schwerpunkt auf Bonden RTI International Laden Sie

High Density Interconnect Bonding of Heterogeneous Materials Using Non-Collapsible Microbumps at 10 μm Pitch

June 2014 Schwerpunkt auf Bonden RTI International Laden Sie

Toward a flip-chip bonder dedicated to direct bonding for production environment

Schwerpunkt auf Bonden Laden Sie

IWLPC October 24, 2017    SET, Saint-Jeoire, France

3D vertical integration of components is now an industrial reality. Considerations and results on direct bonding for HVM precise assembly are presented.

Chip to wafer copper direct bonding electrical characterization and thermal cycling

December 2013 Schwerpunkt auf Bonden CEA – LETI, MINATEC Campus Laden Sie

Micro-tube insertion into aluminum pads: Simulation and experimental validations

IMAPS 2013 Schwerpunkt auf Bonden CEA – LETI, MINATEC Campus Laden Sie

9th International Conference and Exhibition on Device Packaging

This material is posted here with permission of IMAPS.

Aluminum to aluminum Bonding at Room Temperature

ECTC 2013 Schwerpunkt auf Bonden CEA – LETI, MINATEC Campus Laden Sie

Chip to wafer direct bonding technologies for high density 3D integration

ECTC 2012 Schwerpunkt auf Bonden CEA – LETI, MINATEC, STMicroelectronics, SET Laden Sie

A 10 μm Pitch Interconnection Technology using Micro Tube Insertion into Al-Cu for 3D Applications

ECTC 2011 Schwerpunkt auf Bonden CEA – LETI, MINATEC, LEM3 –CNRS/UPV-M Laden Sie

This material is posted here with permission of IEEE.

Microbumping Technology for Hybrid IR detectors, 10µm pitch and beyond

EPTC 2014 Schwerpunkt auf Bonden IMEC Leuven, Belgium SOFRADIR Veurey-Voroize, France Singapore Laden Sie

Low-Profile 3D Silicon-on-Silicon Multi-chip Assembly

ECTC 2011 Schwerpunkt auf Bonden IBM T.J. Watson Research Center Laden Sie

This material is posted here with permission of IEEE.

Insertion Bonding: A Novel Cu-Cu Bonding Approach for 3D Integration

ECTC 2010 Schwerpunkt auf Bonden IMEC and the Katholieke Universiteit Leuven Laden Sie

This material is posted here with permission of IEEE.

Three Chips Stacking with Low Volume Solder Using Single Re-Flow Process

ECTC 2010 Schwerpunkt auf Bonden Institute of Microelectronics - A*STAR Laden Sie

This material is posted here with permission of IEEE.

Ultrathin 3D ACA FlipChip-In-Flex Technology

ECTC 2010 Schwerpunkt auf Bonden Berlin Technical University, NB Technologies and Fraunhofer IZM Laden Sie

This material is posted here with permission of IEEE.

Fabrication and performance of InAs/GaSb-based superlattice LWIR detectors

SPIE Defense, Sensing & Security 2010 Schwerpunkt auf Bonden HRL Laboratories Laden Sie

Copyright 2010 SPIE

SET Technical Bulletin N°3

February 2010 Schwerpunkt auf Bonden CEA-Leti, IMEC, ITRI, IME-A*Star, RTI, etc... Laden Sie

Embedded active device packaging technology for real DDR2 memory chips

IWLPC 2010 Schwerpunkt auf Bonden Industrial Technology Research Institute (ITRI) Laden Sie

Originally published in the IWLPC Proceedings

Low Temperature Bonding of High Density Large Area Array Interconnects for 3D Integration

IMAPS 2010 Schwerpunkt auf Bonden RTI International Laden Sie

This material is posted here with permission of Imaps.

Development done on Device Bonder to address 3D requirements in a Production Environment

Schwerpunkt auf Bonden Laden Sie

IWLPC 2014 focus on bonding SET, Saint-Jeoire, France

Key to the success of 3D integration will be the ability to accurately align and bond devices with aggressive feature sizes

Electrical characterization of high count, 10 µm pitch, room-temperature vertical interconnections

Device Packaging 2009 Schwerpunkt auf Bonden CEA-LETI Laden Sie

This material is posted here with permission of Imaps.

RF MEMS and flip-chip for space flight demonstrator

June 2009 Schwerpunkt auf Bonden Thales Alenia Space Laden Sie

New Reflow Soldering and Tip in Buried Box (TB2) Techniques For Ultrafine Pitch Megapixels Imaging Array

ECTC 2008 Schwerpunkt auf Bonden CEA-LETI Laden Sie

This material is posted here with permission of IEEE.

NaPANIL „Library of Processes“

March 2012 Schwerpunkt auf Nano-Prägung NaPANIL Laden Sie

Second edition with results of the NaPANIL-project

UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale

November 2008 Schwerpunkt auf Nano-Prägung IISB Laden Sie

UV nanoimprinting lithography using nanostructured quartz molds with antisticking functionalization

February 2008 Schwerpunkt auf Nano-Prägung CNR-IMM Laden Sie

Towards 5μm interconnection pitch with Die-to-Wafer direct hybrid bonding

ECTC 2021 Konferenzberichte

Die-to-wafer direct hybrid bonding process is foreseen as a key enabler of heterogeneous 3D integration. Hybrid bonding technologies were first developed on W2W assembly reaching 3D interconnection pitch of 1μm . Recently, CEA-Leti demonstrated the feasibility of DTW direct hybrid bonding at 10μm with a specific die bonder (NEO HB) developed by SET Corporation. In this paper, the last improvements of DTW hybrid bonding process flow and die bonder alignment capability are presented. Main results showed an alignment capability improved to <1μm which enables bonding of die with <5μm interconnection pitch. Finally, multi-interconnection pitch bondings on a wafer were achieved with Cu pitches varying from 5μm to 10μm.

https://ieeexplore.ieee.org/document/9501509/authors#authors

Die to Wafer Direct Hybrid Bonding Demonstration with High Alignment Accuracy and Electrical Yields

2019 International 3D Systems Integration Conference (3DIC) Konferenzberichte A. Jouve; L. Sanchez; C. Castan; N. Bresson; F. Fournel; N. Raynaud; P. Metzger Sendai, Japan

Die-To-Wafer (D2W) direct hybrid bonding is foreseen as a major breakthrough for the future of 3D components; however, its industrialization rises some additional challenges compared to Wafer-To-Wafer processing. This paper presents a 300mm wafer complete solution developed at LETI to improve bonding yield of D2W hybrid bonding using copper interconnections until the assessment of the electrical performances thanks to a dedicated 300mm electrical test vehicle and robust stacking system. Stackings with +/-1.5μm accuracy and excellent bonding interface have been obtained (80% bonding yield). After stacking and annealing, the die can be thinned down to 10μm without damage. Electrical yield measured on daisy-chains with more than 20.000 connections present more than 75% yield and shown very limited drift after preliminary environmental reliability tests. All these results confirmed the high industrial potential of D2W hybrid bonding technology.

Opto-electronics flip-chip bonding automation and in-situ quality monitoring

Konferenzberichte Laden Sie

Aurélien Griffart from SET at EMPC – Pisa, Italy, September 16-19, 2019  

Die-to-Wafer Direct Bonding for Production Environment with a New Flip-Chip Bonder

Konferenzberichte Laden Sie

P. Metzger, N. Raynaud

MiNaPAD 2019

New Flip-Chip Bonder dedicated to Direct Bonding for Production Environment

Konferenzberichte Laden Sie

Flip-chip assembly for focal plane array

Konferenzberichte Laden Sie

Pascal Metzger from SET at IST :GST – Mumbai, India, November 25-26, 2017  

Toward a flip-chip bonder dedicated to direct bonding for production environment

Konferenzberichte Laden Sie

Pascal Metzger from SET at IWLPC – San Jose, CA, USA, October 24-25, 2017  

Flip-chip bonding: how to meet the high accuracy requirements ?

Konferenzberichte Laden Sie

Caroline Avrillier from SET at EMPC – Warsaw, Poland, September 10-13, 2017  

Chip-to-Wafer Technologies for High Density 3D Integration

Konferenzberichte Laden Sie

Penned by CEA Leti, Minatec campus, CNRS Cemes, ALES, SET, ST Microelectronics and presented at MinaPad 2011

3D-IC Integration using D2C or D2W Alignment Schemes together with Local Oxide Reduction

Konferenzberichte Laden Sie

Gilbert Lecarpentier from SET at Imaps Device Packaging 2011

Flip-chip die bonding: an enabling technology for 3D integration

Konferenzberichte

Keith Cooper from SET North America at IWLPC 2010

Flip-Chip Assembly FPA

Konferenzberichte Laden Sie

Jean-Stéphane Mottet from SET at ORION – Moscow XXII International Conference Photoelectronics and Night Vision Devices, May 28th, 2014

Die-to-wafer bonding of thin dies using a 2-step approach: high accuracy placement, then gang bonding

Konferenzberichte Laden Sie

Gilbert Lecarpentier from SET at Imaps Device Packaging 2010

Die-to-Die and Die-to-Wafer Bonding solution for High Density, Fine Pitch Micro-Bumped Die

Konferenzberichte Laden Sie

Gilbert Lecarpentier from SET at Imaps Device Packaging 2012

High Accuracy Flip-Chip Equipement

Konferenzberichte Laden Sie

Nicolas Raynaud from SET at European 3D Summit – Grenoble, France, 18-20 January 2016

Development done on Device Bonder to Address 3D Requirements in a Production Environment

Konferenzberichte Laden Sie

Pascal Metzger from SET at IWLPC, San Jose, November 11-13, 2014

Process and Equipment Enhancements for C2W bonding in a 3D Integration Scheme

Konferenzberichte Laden Sie

Keith Cooper from SET North America at IWLPC 2011

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